leshan radio company, ltd. 1 2 3 n - channel device marking shipping ordering information 72 72 = device code m = month code marking diagram & pin assignment 3 2 1
maximum ratings rating symbol value unit drain?source voltage v dss 60 v dc drain?gate voltage (r gs = 1.0 m ? ) v dgr 60 v dc drain current ? continuous t c = 25 c (note 1.) ? continuous ? i d i dm madc gate?source voltage ? continuous v gs vdc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 2.) t a = 25 c derate above 25 c p d 150 1.2 mw mw/ c thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j, t stg +150 c 1. the power dissipation of the package may result in a lower continuous drain current. 2. fr?5 = 1.0 x 0.75 x 0.062 in. 3. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. n?channel sot?723 ? pb?free package is available. 20 small signal mosfet 115 mamps, 60 volts m pulse t < 10us s-l2n7002m3t5g sot-723 1 2 3 115 800 ?55 to rev .o 1/4 l2n7002m3t5g l2n7002m3t5g 72 8000 tape & reel s-l2n7002m3t5g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. l2n7002m3t5g , s-l2n7002m3t5g electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 60 ? ? vdc zero gate voltage drain current t j = 25 c (v gs = 0, v ds = 60 vdc) t j = 125 c i dss ? ? ? ? 1.0 500 adc gate?body leakage current, forward (v gs = 20 vdc) i gssf ? ? 100 nadc gate?body leakage current, reverse (v gs =? 20 vdc) i gssr ? ? ?100 nadc on characteristics (note 2.) gate threshold v oltage (v ds = v gs ,i d = 250 adc) v gs(th) 1.0 1.8 2.2 vdc on?state drain current (v ds 2.0 v ds(on) ,v gs = 10 vdc) i d(on) 500 ? ? ma static drain?source on?state voltage (v gs = 10 vdc, i d = 500 madc) (v gs = 5.0 vdc, i d = 50 madc) v ds(on) ? ? ? ? 3.75 0.375 vdc static drain?source on?state resistance (v gs = 10 v, i d = 500 madc) (v gs = 5.0 vdc, i d = 50 madc) r ds(on) ? ? 4 4 ohms forward transconductance (v ds 2.0 v ds(on) ,i d = 200 madc) g fs 80 ? ? mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss ? 17 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss ? 10 25 pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss ? 2.5 5.0 pf switching characteristics (note 2.) turn?on delay time (v dd = 25 vdc , i d 500 madc, t d(on) ? 7 20 ns turn?off delay time (v r g = 25 , r l = 50 ,v gen = 10 v) t d(off) ? 11 40 ns body?drain diode ratings diode forward on?voltage (i s = 115 madc, v gs = 0 v) v sd ? ? ?1.5 vdc source current continuous (body diode) i s ? ? ?115 madc source current pulsed i sm ? ? ?800 madc 2. pulse test: pulse width 300 s, duty cycle 2.0%. ? ? rev .o 2/4
leshan radio company, ltd. typical electrical characteristics
! " " #$% &$' &$( &$) &$# &$% %$' %$( %$) %$# % &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 1. ohmic region &$% %$' %$( %$) %$# &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 2. transfer characteristics #$) #$# #$% &$' &$( &$) &$# &$% %$' %$( %$) &$# &$%+ &$& &$&% &$% %$-+ %$- %$'+ %$' %$,+ %$,
(%
#% .
#% .
(% .
&%% .
&)%
(%
#% .
#% .
(% .
&%% .
&)% figure 3. temperature versus static drain?source on?resistance figure 4. temperature versus gate threshold voltage /#+ /&% - ' , ( ) * + /&%
++ #+ &#+ /&% /#%%0 / /&$%0 rev .o 3/4 l2n7002m3t5g , s-l2n7002m3t5g
leshan radio company, ltd. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 1.0 0.039 mm inches 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.20 0.27 b1 0.25 0.3 0.35 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. sot?723 soldering footprint rev .o 4/4 l2n7002m3t5g , s-l2n7002m3t5g
|
